Performance analysis of deuterium ion implanted polycrystalline silicon solar cell

Abstract

Polycrystalline silicon (Wacker) solar cells have been made by diffusion process and subsequently deuterium implantation was done for passivation. It was found that short-circuit current, fill factor and efficiency were improved significantly. Most significant improvement was observed in the dark I-V characteristics. Qualitative explanations for the improvement and of the characteristics of solar cells following deuterium ion implantation are proposed. These interpretations are supported by the preliminary results of studies on the physico-chemical properties of the hydrogen in polycrystalline silicon. It is concluded that the deuterium ion-implantation may be one of the necessary approaches to improve the photovoltaic properties of polycrystalline silicon solar cells. © 1989.