Optical and Electrical Characterisation of an p+-InAs 0.96Sb0.04/n0-InAs0.96Sb 0.04/n+-InAs Photodetector for Mid-infrared Application

Abstract

An InAsSb p+-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measured values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.