Negative bias instability in silicon dioxide films grown using oxidise-etch-oxidise process

Abstract

The results of an experimental study on the negative bias instability in SiO2 films are reported in this paper. The standard, thermally grown oxide and the oxide grown using oxidise-etch-oxidise process were used in the fabrication of MOS capacitors for the purpose of a comparative study. The time, temperature and voltage dependence of the shift in midgap voltage has been studied. An overall reduction in the magnitude of the voltage shift of the devices grown using oxidise-etch-oxidise process has been observed over the entire time, temperature and voltage domain under study. © 1992.