Effect of low and high temperature annealing on the electrical properties of pure n2o/sih4 pecvd sio2 deposited at a high rate

Abstract

Low and high temperature anneals have been performed on pure N2O/SiH4 PECVD SiO2, and their influence on the bulk and interface properties is studied. The study reveals degradation of the interface with increasing time and temperature of annealing beyond the first 10 to 40 min low-temperature anneal, as observed from the rising values of fixed oxide charge density and interface trap level density. Bulk properties, such as leakage current at low fields and electron trapping, improve with annealing time and temperature due to densification and loss of Si-OH groups, but the primary breakdown strength also reduces simultaneously. © 1996 Taylor & Francis Group, LLC.