A threshold voltage model for the short-channel double-gate (DG) MOSFETs with a vertical gaussian doping profile

Abstract

The paper presents a threshold voltage model of short-channel double-gate (DG) MOSFETs with a Gaussian doping profile in the vertical direction of the channel. The classical definition of the threshold voltage of conventional MOSFETs has been modified to obtain the doping dependent threshold voltage of the present device with the peak channel doping ranging from 10 14 cm -3 to 10 19 cm -3. The threshold voltage dependence on the channel length, silicon channel thickness and gate oxide thickness are also presented. The effects of varying doping peak position in the channel along with the effect of the variation of straggle (σ p) on the threshold voltage have also been investigated. The results are well matched with the simulation results obtained by using the commercially available 2D ATLAS™ device simulator. Copyright © 2011 American Scientific Publishers All rights reserved.