Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics

Abstract

The effect of illumination on the Schrodinger's wave function has been studied in a quantum well of n-AlGaAs/GaAs MODFET. The method is based on the solution of the Schrodinger's equation and Poisson's equation. Partial depletion of the active region of the MODFET has been considered. At the heterojunction interface two different models for the quantum well have been assumed: (1) a triangular potential well and (2) a modified triangular potential well of finite depth. The potential energy is calculated using the Poisson's equation. From the knowledge of modified Schrodinger's wave function under illumination we have calculated the sheet concentration and the drain source current. Also the off-set voltage of the device and the transfer characteristics have been evaluated and discussed. The I-V characteristic is compared with available experimental data at a particular gate-source voltage under illumination.