Frequency dependent characteristics in an ion-implanted photo MESFET

Abstract

The possibility of using a MESFET for high speed photodetection and switching has been investigated by various workers. In this paper an attempt is made to theoretically evaluate the effect of a signal modulated optical radiation incident on the transparent or semi-transparent Schottky gate of a MESFET device. It is observed that the modulating frequency changes both the I-V characteristics and the threshold voltage of the ion-implanted Si-MESFET. However, in the microwave frequency range the threshold voltage is found to be almost unchanged with frequency. The effect of the wavelength of radiation is the same as observed earlier [1]. © 1987.