Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET

Abstract

Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitance Cgs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistance Rds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits. © 1987 Springer-Verlag.