Investigations of the variation of voltage gain with stability factor and biasing resistances in Darlington composite transistor

Abstract

The expression for the voltage gain of a Darlington composite transistor has been obtained in terms of the biasing resistance and the current gain α of a single transistor. Further, an expression has been developed in terms of the stability factor of a composite transistor. The variations of the voltage gain with biasing resistances and with the stability factor have also been studied and a set of curves are given showing these variations. © 1969, Walter de Gruyter. All rights reserved.