Analysis of structural, optical and electrical properties of metal/p-ZnO-based Schottky diode

Abstract

A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported. The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper. Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film. The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of (101) of ZnO film. The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer. The estimated bandgap of Cu-doped p-type ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K. The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLASTM device simulator. © 2017 Chinese Institute of Electronics.