A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

Abstract

A two-dimensional (2D) analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) metal-oxide- semiconductor field-effect transistors (MOSFETs) is presented in this paper. The 2D Poisson's equation has been solved with suitable boundary conditions by applying the parabolic potential approximation. The lightly doped channel has been taken to enhance the device performance in terms of higher carrier mobility and minimum dopant fluctuation. The improved hot carrier effects over the double-material DG MOSFETs have been demonstrated. Different length ratios of three channel regions related to different gate materials have been optimized to minimize short-channel effects. The effects of device parameters on the threshold voltage have also been discussed. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™. © 2010 American Institute of Physics.