Noise characteristics of a superlattice avalanche photodiode

dc.contributor.author	Chakrabarti P.; Choudhury S.C.; Pal B.B.
dc.date.accessioned	2025-05-24T09:57:45Z
dc.description.abstract	The noise generated due to randomness of multiplication process in the avalanche region of an AlxGa1-xAs/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given. © 1989 Springer-Verlag.
dc.identifier.doi	https://doi.org/10.1007/BF00618894
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22538
dc.relation.ispartofseries	Applied Physics A Solids and Surfaces
dc.title	Noise characteristics of a superlattice avalanche photodiode

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