Acoustoelectric Amplification in the Presence of Non‐Uniform Electric Field and Carrier Concentration in Solids
| dc.contributor.author | Misra K.D.; Pandey M.K. | |
| dc.date.accessioned | 2025-05-24T09:55:59Z | |
| dc.description.abstract | Acoustoelectric amplification in a strain‐dependent, transversely magnetised semiconductor is studied in the presence of non‐uniform electric field and carrier concentration along the sample length. A generalised expression for the amplification coefficient in strain‐dependent and piezoelectric materials is also discussed for a single carrier semiconductor. Application to a multilayered system of different single carrier semiconductors coupled to one elastic wave is also suggested. The non‐uniformity in carrier concentration is found to have significant effect on the amplification coefficient in a multilayer system. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGaA | |
| dc.identifier.doi | https://doi.org/10.1002/pssb.2221720216 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20482 | |
| dc.relation.ispartofseries | physica status solidi (b) | |
| dc.title | Acoustoelectric Amplification in the Presence of Non‐Uniform Electric Field and Carrier Concentration in Solids |