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Acoustoelectric Amplification in the Presence of Non‐Uniform Electric Field and Carrier Concentration in Solids

dc.contributor.authorMisra K.D.; Pandey M.K.
dc.date.accessioned2025-05-24T09:55:59Z
dc.description.abstractAcoustoelectric amplification in a strain‐dependent, transversely magnetised semiconductor is studied in the presence of non‐uniform electric field and carrier concentration along the sample length. A generalised expression for the amplification coefficient in strain‐dependent and piezoelectric materials is also discussed for a single carrier semiconductor. Application to a multilayered system of different single carrier semiconductors coupled to one elastic wave is also suggested. The non‐uniformity in carrier concentration is found to have significant effect on the amplification coefficient in a multilayer system. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGaA
dc.identifier.doihttps://doi.org/10.1002/pssb.2221720216
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/20482
dc.relation.ispartofseriesphysica status solidi (b)
dc.titleAcoustoelectric Amplification in the Presence of Non‐Uniform Electric Field and Carrier Concentration in Solids

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