Double-Gate Field-Effect Diode: A Novel Device for Improving Digital-and-Analog Performance

Abstract

In this article, a novel double-gate (DG) field-effect diode (FED) has been proposed, which exhibits smaller short-channel effects (SCEs), smaller OFF-state current ( I{OFF} ) and higher ON-state current ( ION ) compared with the previously introduced common FEDs and the side-contacted FEDs (SFEDs). Based on the TCAD simulation study, due to the stronger control of the two gates over the channel, the proposed double-gate FED (DGFED) is shown to suppress the SCEs and to improve ION /IOFF ratio significantly compared with the SFEDs. The proposed device is also shown to have smaller gate delay time, smaller energy-delay product, larger cutoff frequency, and larger transconductance than the SFED. Thus, DGFED is a promising device for substituting the SFED in possible high-frequency analog and digital applications. © 1963-2012 IEEE.