Dielectric Properties of Y,Cu,Ti,0,, and Effect of Doping at its Different sites

Abstract

Electronic industries are in constant search of high performance dielectric materials exhibiting temperature and frequency-stability, colossal permittivity (εr > 1000) and sufficiently low dielectric loss. It facilitates miniaturization of high-energy density storage devices such as Dynamic Random Access Memory (DRAM) devices, Multi Layer Ceramic Capacitors (MLCC) and many other electronic devices in automobile and aircraft. Traditional Pb(ZrxTi1-x)O3 and BaTiO3-based ferroelectric materials exhibit high dielectric properties. However, their dielectric properties are strongly temperature-dependent due to phase transition at Curie temperature (Tc). Furthermore, lead-based materials are eco-unfriendly and harmful to health. Hence, it is necessary to find some non-ferroelectric materials with high dielectric constant to substitute these traditional materials.