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Wurtzite nanoparticle ink spray processing for chalcopyrite CuIn(S,Se)2 photovoltaic absorber layer

dc.contributor.authorPradeepkumar M.S.; Kumar A.; Das S.; Basu J.; Ahmad M.I.
dc.date.accessioned2025-05-23T11:12:57Z
dc.description.abstractCuIn(S,Se)2 solar cells have regained its significance mainly for its utilization in tandem cells for developing a low cost all solution processed tandem devices. However, achieving a dense, crack-free, and crystalline chalcopyrite- CuIn(S,Se)2 (ch-CISSe) through solution route is one of the key challenges in the fabrication of CISSe thin film solar cells (TFSCs). Here, we have utilized wurtzite-CuInS2 (wz-CIS) nanoparticle ink to obtain a chalcopyrite-CISSe absorber layer and demonstrated a 7.34 % efficient solar cell. Ink composition and spray parameters were optimised to produce compact crack-free films using nanoparticle-based inks. Further, selenization was performed to obtain chalcopyrite CuIn(S,Se)2 (ch-CISSe) and reduce the grain boundary density, which acts as recombination centres. The wz-CIS and ch-CISSe devices were fabricated by sequentially depositing the buffer layer (CdS), window layer (i-ZnO and Al–ZnO) and gold electrode. © 2023 Elsevier Ltd
dc.identifier.doihttps://doi.org/10.1016/j.mssp.2023.107940
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/5315
dc.relation.ispartofseriesMaterials Science in Semiconductor Processing
dc.titleWurtzite nanoparticle ink spray processing for chalcopyrite CuIn(S,Se)2 photovoltaic absorber layer

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