Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates

Abstract

Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ∼ 7561 at ± 2 V, barrier height ΦB, eff ∼ 0.78 eV and ideality factor η ∼ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method. © 2014 IEEE.