Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors

Abstract

The article reports fabrication, characterization, and testing of the performance of ZnO-based metal-insulator-semiconductor (MIS) Schottky barrier ultraviolet photodetectors under varying thermal treatment. The ZnO thin film was grown on p-type Si 〈 100 〉 substrate by using sol-gel technique. The electrical and optical characteristics of MIS photodetector were studied. The study revealed that the performance of the device improves with increasing postmetal deposition annealing temperature up to 250 °C approximately. For annealing temperature beyond 250 °C the performance of the device degrades drastically. The variation in the electrical and photoresponse properties of MIS photodetector can be attributed to combined effects of interfacial reaction and phase transition during the annealing process. © 2010 American Institute of Physics.