Poly(3, 3'''-dialkylquaterthiophene)/ZnO quantum dots based hybrid p-n junction diode

dc.contributor.author	Kumar C.; Rawat G.; Kumar H.; Kumar Y.; Ratan S.; Mishra A.K.; Prakash R.; Jit S.
dc.date.accessioned	2025-05-24T09:32:09Z
dc.description.abstract	The organic-inorganic hybrid p-n junction diode based on poly (3,3'''-dialkylquarterthiophene) (PQT-12) and ZnO quantum dots (QDs) has been fabricated and characterized in this work. The solution process technique is used for the deposition of PQT-12 and ZnO QDs. ITO coated glass is used as substrate and bottom electrode, whereas Ag is used as a top electrode of the vertical hybrid diode. ZnO QDs facilitates the band pass photo-absorption of visible light through PQT-12 film by blocking high energy photons. The diode shows an excellent switching property with the rectification ratio of 3520 under applied bias of ±3 V. The electrical properties of the hybrid diode such as ideality factor and reverse saturation current are calculated as 3.12 and 3.5×10-s A, respectively. © 2018 IEEE.
dc.identifier.doi	https://doi.org/10.1109/ICMAP.2018.8354570
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/17776
dc.relation.ispartofseries	2018 3rd International Conference on Microwave and Photonics, ICMAP 2018
dc.title	Poly(3, 3'''-dialkylquaterthiophene)/ZnO quantum dots based hybrid p-n junction diode

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