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Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7

dc.contributor.authorSingh M.; Ghosh L.; Gangwar V.K.; Kumar Y.; Pal D.; Shahi P.; Kumar S.; Mukherjee S.; Shimada K.; Chatterjee S.
dc.date.accessioned2025-05-23T11:23:35Z
dc.description.abstractThe magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin-orbit scattering time scales. The topological surface state bands have been explored using ARPES. © 2022 Author(s).
dc.identifier.doihttps://doi.org/10.1063/5.0094556
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/9165
dc.relation.ispartofseriesApplied Physics Letters
dc.titleCorrelation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7

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