Electrochemical Impedance (EIS) behavior of CuInSe2 (CIS) thin films on high resistance ITO/PET flexible substrates

Abstract

This work reports on the possibility to electrodeposit compositional and ultrathin Copper indium diselenide (CuInSe2) thin films on high resistance flexible ITO/PET substrates by one step electrodeposition technique. Through electrochemical impedance (EIS) and Mott-Schottky studies, the deposition time was optimized. The optimized CIS deposits were of p-type in nature having a composition of CuIn1.05Se1.55. There was no considerable increase in film thickness after a deposition period of 60 mins, due to the high resistive nature of the substrate and CIS itself. The maximum thickness obtained was around 500 to 600 nm for 60 min deposition. © 2017 Elsevier Ltd.