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The effect of electric field inhomogeneity on the QUILLS process

dc.contributor.authorTiwari S.C.
dc.date.accessioned2025-05-24T09:56:22Z
dc.description.abstractThe electric field in the active layer of an n+nn+ GaAs device is not uniform in practice. The author therefore decided to solve the Schrodinger equation for electron motion under crossed electric (inhomogeneous) and uniform magnetic fields, using the effective-mass approximation. The size dependence of the quasi-elastic inter-Landau-level scattering (QUILLS) process reported experimentally is explained qualitatively in terms of the effect of electric field inhomogeneity on energy eigenvalues and electron eigenfunctions.
dc.identifier.doihttps://doi.org/10.1088/0268-1242/1/3/007
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/20928
dc.relation.ispartofseriesSemiconductor Science and Technology
dc.titleThe effect of electric field inhomogeneity on the QUILLS process

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