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SnS2/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors

dc.contributor.authorDwivedi A.K.; Tripathi R.; Tripathi S.; Jit S.; Tripathi S.
dc.date.accessioned2025-05-23T11:23:03Z
dc.description.abstractThis letter proposes a SnS2/PEDOT:PSS based heterojunction UV-visible light photodetector fabricated on ITO coated flexible PET substrate using the low-cost sol-gel spin coating method. The device shows respective responsivity, external quantum efficiency (EQE), detectivity and sensitivity of 182.89 A/W, 7.55 × 104%, 1.44 × 1012 Jones, and 4.40 at 300 nm (UV); 837.31 A/W, 2.30 × 105 %, 5.24 × 1012Jones and 20.15 at 450 nm (visible); and 706.94 A/W, 1.25 × 105%, 4.42 × 1012 Jones, and 17.01 at 700nm (visible). The transient measurement gives a rise-time (tr) of 27 µs and a fall time (tf) of 36 µs at 450 nm and −1 V bias. The high EQE is attributed to the photomultiplication effect resulted from the interfacial trap induced charge injection in organic photodetectors. © 2022 IEEE.
dc.identifier.doihttps://doi.org/10.1109/LED.2022.3207421
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/8574
dc.relation.ispartofseriesIEEE Electron Device Letters
dc.titleSnS2/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors

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