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Low frequency noise in the trap free insulated diode with thermal free carriers
| dc.contributor.author | Sharma Y.K. | |
| dc.date.accessioned | 2025-05-24T09:55:38Z | |
| dc.description.abstract | The expression for the spectral intensity of low frequency noise voltage, based on the Method of Regional Approximation, has been calculated for a trap free insulated diode containing thermal free carriers, while current is lower than the critical value. It is shown that the value of spectral intensity is directly proportional to the fourth power of current density. © 1974 The Japan Society of Applied Physics. | |
| dc.identifier.doi | https://doi.org/10.1143/JJAP.13.1350 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20056 | |
| dc.relation.ispartofseries | Japanese Journal of Applied Physics | |
| dc.title | Low frequency noise in the trap free insulated diode with thermal free carriers |