Optically tuned characteristics of an ion implanted GaAs OPFET

Abstract

Optically tuned GaAs OPFET is a potential device for integrated Optics, Optical Communication and Computing. The transient analysis of an ion implanted GaAs OPFET shows that the carriers generated in the gate depletion region due to absorption of photons attains the steady state value after 40 ps. The D.C.analysis indicates that a analysis normally ON device becomes OFF at a higher negative gate voltage compared to the dark condition and a normally OFF device is opened even at zero gate bias. The drain-source current and the transconductance are significantly enhanced due to optical radiation. In the a.c. analysis, the optical radiation is modulated by the signal and hence the number of electron-hole pairs generated below the gate is also modulated. So the device properties are greatly influenced by the modulated frequency. © 1991 SPIE. All rights reserved.