I-V model for short gate length ion-implanted GaAs OPFETs

dc.contributor.author	Tripathi S.; Jit S.
dc.date.accessioned	2025-05-24T09:57:18Z
dc.description.abstract	The current-voltage characteristics for optically controlled short gate-length ion-implanted GaAs MESFET has been presented in this paper. The illumination sensitivity of the drain-source current has been analyzed. It is shown that good agreements are obtained between the developed model and the numerical simulation data obtained by ATLAS™ two-dimensional (2D) device simulator. © 2011 IEEE.
dc.identifier.doi	https://doi.org/10.1109/MSPCT.2011.6150441
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/21994
dc.relation.ispartofseries	2011 International Conference on Multimedia, Signal Processing and Communication Technologies, IMPACT 2011
dc.title	I-V model for short gate length ion-implanted GaAs OPFETs

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