Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor

Abstract

In this paper, analog/radio frequency (RF) analysis of double-gate tunnel FET (DG TFETs) with a combination of three different gate dielectric such as SiO2, stacked oxide (SiO2+HfO2) and, HfO2 is performed by using Silvaco-Atlas technology computer added (TCAD) simulation tool. Figure of merits (FOM's) like transconductance (gm), output conductance (gds), gate capacitance (Cgg), unity gain cut-off frequency (fi), gain bandwidth product (GBW) and transconductance generation factor (gm/Id) are analyzed in the present study and compare with them. Higher ION/IoFF (1011) of high-k only dielectric DGTFET (D3), can reduce dynamic as well as static power dissipation in digital circuits. Similarly higher RF FOM's i.e. ft and GBW in gigahertz range projects the utility of D3 device for RF Circuits. © 2019 IEEE.