Solution-Processed LiNbO3Thin Film as a Gate Dielectric of a Ferroelectric Thin Film Transistor

Abstract

An ideal ferroelectric gate dielectric based thin film transistor (FeTFT) can offer a memory device of random access, high speed, low power, high density and nonvolatility. Lithium niobate (LiNbO3) being a well-known ferroelectric material, but its implementation in FeTFT has not been explored much. This work is reporting a methodology of LiNbO3 based FeTFT device fabrication by solution processed technique. The carrier mobility of 9.6 cm2V-1s-1 and current ON/OFF ratio of 1.9x103 are attained with this LiNbO3 ferroelectric gate dielectric based FeTFT device. This work also demonstrates a reasonably good memory retention time of a ferroelectric thin film transistor. © 2022 IEEE.