Noise Performance of IMPATT Diode Oscillator at Different mm-Wave Frequencies

Abstract

The performance of noise of Silicon (Si) DDR (Double Drift Region) IMPATT (Impact Ionization Avalanche Transit Time) devices at different millimeter-wave frequencies is studied and presented in this article. The motivation behind this study is to see how the device operates at high frequencies. The temperature for the system has been kept constant at 300 K. Double iterative method has been used for the simulation. The noise measure and the noise spectral density at the desired window frequencies has been studied, analyzed and presented in this article. The direct dependence of noise on frequency has not been presented in any previous work; however, the dependence of ionization on frequency has been presented in some articles which have been described here. The authors here have tried to provide a dependence of noise performance on the operating frequency based on the given literature and simulated results. Simulated results show that the noise measure improves significantly with increase in frequency and the device thus proves to be more effective in use at higher frequencies. Different doping and structural parameters for the Si IMPATTs at different operating frequencies have been reported and used in the present work. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.