Effect of Processing and Anisotropy on the Morphology and Performance of the Pr2/3Cu3Ti4O12 (PCTO) Dielectric Material

Abstract

The aim of the present study was to investigate effects of processing at the low and high temperatures on the anisotropy, microstructure; and electrical properties of Pr2/3Cu3Ti4O12 (PCTO) dielectric materials. The experimental approach involved the synthesis, sintering and grain growth at two temperatures, followed by analysis of the resulting materials, their morphology, capacitance, and resistivity. Synthesis was performed using oxide source materials in stoichiometric ratio and grain growth was monitored for the ceramics processed at 900 °C and 1000 °C. Morphological results indicated that grain growth occurs via the channeling mechanism and subsequent grain merging. High temperature processing showed that stabilized grains are rich in copper and stabilize into faceted grains due to changes in interface energy anisotropy due to the higher copper concentration. Electrical characterization of the materials processed at 1000 °C indicates that with copper migration from the grain boundaries to grains, the capacitance of the composite increased, while the resistivity is decreased. Additionally, difference in the anisotropy due to increased concentration of copper in grains produces facetted surfaces and screw dislocation steps on the facets. © The Author(s) 2025.