A unified model for MESFET analysis

dc.contributor.author	Chattopadhyay S.N.; Pal B.B.
dc.date.accessioned	2025-05-24T09:57:55Z
dc.description.abstract	A unified model for the shallow channel MESFET device has been developed by considering a generalised doping distribution of impurities in the active region. The I-V characteristics, threshold voltage and transconductance are expressed in terms of fabricational and physical parameters for a Si MESFET structure. Plots have been made and compared for the current against the voltage, the threshold voltage against the concentration and the transconductance against the gate-source voltage for three different impurity profiles, namely, Gaussian, erfc and constant doping.
dc.identifier.doi	https://doi.org/10.1088/0268-1242/3/3/004
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22728
dc.relation.ispartofseries	Semiconductor Science and Technology
dc.title	A unified model for MESFET analysis

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