Fabrication and characterization of poly-3-hexylthiophene based organic thin film transistor

dc.contributor.author	Tiwari S.; Balasubramanian S.K.; Tiwari S.; Prakash R.
dc.date.accessioned	2025-05-24T09:15:01Z
dc.description.abstract	An organic thin film transistor (OTFT) based on chemically synthesized poly-3-hexylthiophene (P3HT) is successfully fabricated and I-V characteristics of the device is measured at room temperature. The key performance parameters such as ON/OFF ratio, threshold voltage, carrier mobility, conductivity and transconductance are extracted through the I-V characteristics of OTFT and discussed in the paper. © 2012 IEEE.
dc.identifier.doi	https://doi.org/10.1109/ICEmElec.2012.6636245
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/13371
dc.relation.ispartofseries	2012 International Conference on Emerging Electronics, ICEE 2012
dc.title	Fabrication and characterization of poly-3-hexylthiophene based organic thin film transistor

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