Effect of signal-modulated optical radiation on the characteristics of a Modfet

dc.contributor.author	Mitra H.; Singh D.P.; Pal B.B.
dc.date.accessioned	2025-05-24T09:57:09Z
dc.description.abstract	The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency (≲5 MHz) above which the effect of frequency is insignificant. © 1993 Springer-Verlag.
dc.identifier.doi	https://doi.org/10.1007/BF00324352
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/21829
dc.relation.ispartofseries	Applied Physics A Solids and Surfaces
dc.title	Effect of signal-modulated optical radiation on the characteristics of a Modfet

Collections