Electrical and ultraviolet detection properties of n-ZnO thin film/p-Si heterojunction diodes using a ZnO buffer layer

Abstract

This paper reports the electrical and ultraviolet (UV) detection characteristics of n-ZnO thin film based heterojunction diodes grown on a ZnO seed layer coated p-Si substrate by thermal evaporation method. The surface morphology of the as-grown ZnO thin film have been studied by the scanning electron microscopy (SEM) whereas the optical properties of ZnO film have been studied by analyzing the UV-Vis spectrophotometer. The electrical and ultraviolet (UV) detection properties of the n-ZnO thin film/p-Si heterojunction diodes have been investigated by the current-voltage (I-V) measurements under dark and illuminated conditions by exposing UV light of wavelength 365 nm on the ZnO thin film surface of the device. At room temperature, the device shows a significant value of responsivity ∼3.72 A/W measured at bias voltage of +2 V. Copyright © 2015 American Scientific Publishers All rights reserved.