Electron ionization rate in III-V ternary semiconductors

dc.contributor.author	Singh S.R.; Pal B.B.
dc.date.accessioned	2025-05-24T09:58:27Z
dc.description.abstract	Theoretical calculations are presented for the ionization rate of electrons in III-V ternary semiconductor compounds considering alloy scattering and carrier-carrier interaction, in addition to optical phonon scattering and ionization scattering. However, alloy scattering is found to be a weak interaction. Fairly good agreement is obtained for Ga1-xInxAs with x=0.14 and 0.53 with the experimental results and for Ga0.5 Al0.5 As with the existing theoretical result which used an indirect method. The alloy scattering potential has been taken in the form of energy band-gap difference. The calculations can be used for any ternary semi-conductor. © 1987 Springer-Verlag.
dc.identifier.doi	https://doi.org/10.1007/BF00617961
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/23340
dc.relation.ispartofseries	Applied Physics A Solids and Surfaces
dc.title	Electron ionization rate in III-V ternary semiconductors

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