SPICE-compatible microwave model of an optically controlled high electron mobility transistor

Abstract

The effect of optical illumination on the microwave characteristics of an optically gated AlGaAs / GaAs HEMT has been studied theoretically. This article describes an integral approach to the problem which includes the calculation of the capacitance and the sheet concentration of the two-dimensional (2D) electron gas in the illuminated condition. The changes in the various intrinsic parameters of the device under the illuminated condition have been utilized to calculate the Y-parameters of the device at microwave frequencies. The lumped circuit model of the device in the illuminated condition has been obtained with the various components determined from the Y-parameters. The attractive feature of the present model is that it is fully compatible with commonly used circuit simulation packages like SPICE. © 1996 John Wiley & Sons, Inc.