Influence of Zn doping on microstructure, dielectric, and electric properties in Bi2/3Cu3Ti4O12 ceramic synthesized by the semi-wet method

Abstract

Zn-doped and undoped BCTO ceramics (Bi2/3Cu3−xZnxTi4O12, where x = 0, 0.05, 0.1, and 0.2) were prepared by semi-wet synthesis sintered at 1123 K for 8 h. The phase composition of ceramics was evaluated by X-ray diffraction analysis. The microstructural properties were examined by SEM, EDX, and TEM methods. The dielectric constants (ɛr) of Zn-doped BCTO ceramics were higher than that of undoped BCTO ceramics at 100 Hz and room temperature (310 K). The tangent loss (tan δ) values of Zn-doped BCTO ceramics were found to be lower than that of undoped BCTO ceramics at 10 kHz and 310 K. The oxidation states of the constituent elements were obtained by XPS. The Impedance studies show the existence of Maxwell–Wagner type of relaxation phenomena in ceramics. The conductivity variation of Bi2/3Cu3−xZnxTi4O12 ceramics (where x = 0, 0.05, 0.1, and 0.2), with the inverse of temperature follows the Arrhenius equation, with a major temperature range of 300–500 K. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.