Efficient Scalable MoO3 Decorated PSi Based Optical Memristor Devices

Abstract

This letter presents the development of wafer scalable optical memristor devices using molybdenum trioxide (MoO3) decorated porous silicon (PSi). The devices were tested with electrical and optical stimuli at room temperature. The test results have shown that the MoO3 decorated PSi based memristor offers improved performance metrics like high responsivity (826mA/W), high detectivity (1.08× 1011 Jones), fast response speed (84.1/80.1μ s), high paired pulse facilitation (PPF) index (461 %) and high endurance (100 cycles). The value of the responsivity is ∼ 3× 102 times and ~4.5 times higher than PSi and MoO3 based devices respectively. The MoO3 decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications. © 2025 IEEE.