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Tunability of temperature dependent THz photonic band gaps in 1-D photonic crystals composed of graded index materials and semiconductor InSb

dc.contributor.authorSingh B.K.; Pandey P.C.; Rastogi V.
dc.date.accessioned2025-05-24T09:32:09Z
dc.description.abstractTunable temperature dependent terahertz photonic band gaps (PBGs) in one-dimensional (1-D) photonic crystal composed of alternating layers of graded index and semiconductor materials are demonstrated. Results show the influence of temperature, geometrical parameters, grading profile and material damping factor on the PBGs. Number of PBG increases with increasing the layer thickness and their bandwidth can be tuned with external temperature and grading parameters. Lower order band gap is more sensitive to the temperature which shows increasing trend with temperature, and higher order PBGs can also be tuned by controlling the external temperature. Band edges of PBGs are shifted toward higher frequency side with increasing the temperature. Results show that the operational frequencies of PBGs are unaffected when loss involved. This work enables to design tunable Temperature dependent terahertz photonic devices such as reflectors, sensors and filters etc. © 2018 Author(s).
dc.identifier.doihttps://doi.org/10.1063/1.5032769
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/17789
dc.relation.ispartofseriesAIP Conference Proceedings
dc.titleTunability of temperature dependent THz photonic band gaps in 1-D photonic crystals composed of graded index materials and semiconductor InSb

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