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Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability

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dc.contributor.authorBaral K.; Singh P.K.; Kumar S.; Chander S.; Tripathy M.R.; Jit S.
dc.date.accessioned2025-05-24T09:39:31Z
dc.description.abstractThis paper investigates hot carrier (HCEs) and trapped charges reliability issues of junctionless accumulation mode (JAM) nanotube MOSFET. Further leakage current, short channel effects (SCEs), threshold voltage and transconductance generation factor (TGF) have also been studied. Furthermore effect of hot carrier induced trapped charges and its effects on these factors have also been demonstrated. Therefore a novel dual metal-stacked hetero dielectric (DMSHD)-JAM nanotube MOSFET has been proposed and ratio optimized to effectively increase the reliability against these issues. © 2019 IEEE.
dc.identifier.doihttps://doi.org/10.1109/EDTM.2019.8731216
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/18191
dc.relation.ispartofseries2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
dc.titleDual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability

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