Thermally Grown MoSe2Thin Film-Based n-MoSe2/p-Si Broadband Photodetector

Abstract

This article reports an n-MoSe2/p-Si heterojunction-based broadband photodetector fabricated by depositing an n-MoSe2 thin film on a 〈 100〉 p-Silicon substrate (2-5Ω-cm resistivity) by a thermal evaporation method. The facile hydrothermal route was adopted to synthesize MoSe2 powder. The as-synthesized MoSe2 powder was then deposited on the p-type Si substrate to form a p-n heterojunction. The photoresponse of the fabricated device was measured using monochromatic light of 300-1100 nm wavelengths. The maximum responsivity, detectivity, and external quantum efficiency (EQE) of the fabricated device were obtained as 316.25 mA/W, 1.54 × 1011 Jones, and 45%, respectively, at 890 nm with the applied reverse bias voltage of 2 V. The rise time and fall time of the device was 396 and 224 ms, respectively. © 1963-2012 IEEE.