An Analytical Study of Ion Implanted Strained-Si on SOI MOSFETs for Optimizing Switching Characteristics

Abstract

In this paper, surface potential based analytical model of subthreshold swing of ion implanted strained-Si-on- Insulator (SSOI) MOSFETs have been presented. A comprehensive evaluation is presented to optimize the switching characteristics for this MOS structure. The modeling results are validated by comparing with the simulation data obtained by the two dimensional (2D) device simulator ATLAS™. © Springer International Publishing Switzerland 2014.