Dielectric properties of the system GdCo1-xNixO3 synthesized by chemical route (x = 0.10, 0.20)
| dc.contributor.author | Mandal K.D.; Behera L. | |
| dc.date.accessioned | 2025-05-24T09:56:10Z | |
| dc.description.abstract | The perovskite oxides GdCo1-xNixO3 (x = 0.10, 0.20) were prepared by chemical method. The dielectric behavior of compositions with x = 0.10 and 0.20 in the system GdCo1-xNixO3 was studied in the temperature range 300-500 K. It is observed that dielectric constant increases with increasing Ni2+ ions concentration. The frequency dependence of dielectric constant in these materials indicates that space charge polarization contributes significantly to their observed dielectric parameters. A uniform distribution of grains is observed from the microstructure by scanning electron microscopy. © 2006. | |
| dc.identifier.doi | https://doi.org/10.1016/j.jallcom.2006.10.116 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20674 | |
| dc.relation.ispartofseries | Journal of Alloys and Compounds | |
| dc.title | Dielectric properties of the system GdCo1-xNixO3 synthesized by chemical route (x = 0.10, 0.20) |