Growth, structure and thermal stability of quasicrystalline Al–Pd–Mn–Ga thin films

dc.contributor.author	Bohra M.; Pavan T.M.; Fournée V.; Mandal R.K.
dc.date.accessioned	2025-05-23T11:30:38Z
dc.description.abstract	Growth of Al–Pd–Mn–Ga quasicrystalline thin film is hindered by the low melting temperature of Ga (30 °C) and the formation of residual binary phases. In this study, a stable icosahedral film with a composition near Al67.5Pd19Mn7.5Ga5.7 has been achieved using the co-sputtering of Al64.9Pd20.7Mn8.4Ga6 and Al materials followed by ex-situ annealing. The increase in the 6d lattice parameter from 6.45 to 6.48 Å of icosahedral phases suggested that Ga (+1) successfully replaced Al(+3) in the composition. The temperature-dependent XRD study (from RT to 700 °C) reveals that the icosahedral phase found only in a narrow temperature window of 350 – 450 °C. Interestingly, Al63Pd18Mn7.5Ga6 quasicrystalline thin film exhibits cluster spin glass behaviour due to spin-spin interaction of localized Mn ions. These stable icosahedral thin films with crack-free well-defined surfaces can be useful for potential surface-related applications. © 2019 Elsevier B.V.
dc.identifier.doi	https://doi.org/10.1016/j.apsusc.2019.144494
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/12397
dc.relation.ispartofseries	Applied Surface Science
dc.title	Growth, structure and thermal stability of quasicrystalline Al–Pd–Mn–Ga thin films

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