Analysis of GaAs OPFET with improved optical absorption under back illumination

Abstract

The effect of back illumination with improved optical absorption has been analyzed for an ion-implanted GaAs OPFET considering Pearson IV distribution of impurities. Plots have been made for two photo voltages developed across the substrate active layer junction and the Schottky junction. The drain-source current is significantly enhanced for the device when the fiber is inserted up to the active layer substrate junction than the case where finite substrate effect is taken into account.