Performance evaluation of double gate III-V heterojunction tunnel FETs with SiO2/HfO2 Gate oxide structure

Abstract

In this work, we present a 2-D numerical simulation based study for the performance evaluation in terms of drain current, total capacitance, cut-off frequency, transconductance generation factor and transit time of double-gate (DG) heterojunction tunnel field effect transistors (HJ-TFETs) with SiO2/HfO2 stacked gate oxide structure. We also demonstrated that the proposed device shows better results in terms of subthreshold swing (SS=1.5mV/dec) and Ion/Ioff ratio (1e12) than other conventional homo/hetero junction TFET devices. All the simulation plots are obtained by 2-D simulation software ATLAS™ from SILVACO international. © 2018 IEEE.