Generic model of SH-LED for mid-infrared (2-5μm) applications

Abstract

In this paper, we present a physics based model of a P+- InAs0.36Sb0.20P0.44/ n0-InAs/n +-InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection and futuristic optical fiber communication systems in the mid-infrared spectral region at 300K. The model takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of various recombination mechanisms on the quantum efficiency, modulation bandwidth and output power of the LED has been evaluated. The proposed SH-LED has been studied for its utility in mid-infrared optical fiber communication by considering the modulation bandwidth and its variation with active layer width of the SH-LED structure. The I-V characteristic of the SH-LED has been evaluated and cut-in voltage found to be 0.26V. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with the reported experimental results. © 2008 IEEE.