Fabrication of MoS2/ZnO Hybrid Nanostructures for Enhancing Photodetection

Abstract

In this article, the effect of MoS2 and ZnO blend ratio on the performance of MoS2:ZnO hybrid photodiodes is investigated. The UV and visible performance parameters for five different devices consisting of semiconducting layers like MoS2, ZnO, MoS2:ZnO (1:1), MoS2:ZnO (1:2), and MoS2:ZnO (2:1) each are analyzed. The device MoS2:ZnO (1:2) shows the best performance in the UV region with a responsivity of 17.04 A/W, detectivity of 6.84* 10 {13} Jones and external quantum efficiency (EQE) of 6604% at 320nm, -1 V bias. On the other hand, the device MoS2:ZnO (2:1) gives the best performance in the visible region with a responsivity of 2.27 A/W, detectivity of 0.60* 10 {13} Jones, and EQE of 533% at 529nm, -1 V. © 1989-2012 IEEE.