Ferroelectric Gate Heterojunction TFET on Selective Buried Oxide (SELBOX) Substrate for Distortionless and Low Power Applications

Abstract

Ferroelectric material has been used as a gate dielectric material in the heterojunction TFET on SELBOX substrate (Fe-HSTFET), which is responsible for improving the DC/RF and linearity performance as compared to conventional heterojunction TFET on SELBOX substrate (C-HSTFET). The coupling characteristic of the ferroelectric substrate is responsible for the capacitance boosting effect of the device. In DC/RF analysis, we have optimized ION,ION/IOFF ratio, threshold voltage (VT), and subthreshold swing (SS), whereas, in the linearity analysis of the devices, we have optimized gm1,gm2,gm3, VIP2, VIP3, IMD3, IIP3 and 1-dB compression point. Due to improvement in linearity figure of merits (FOMs), the proposed device (Fe-HSTFET) is applicable in distortion less performance and low power applications. © 2020 IEEE.