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Anomalous Hall effect in Cu doped Bi2Te3 topological insulator

dc.contributor.authorSingh A.; Kumar S.; Singh M.; Singh P.; Singh R.; Gangwar V.K.; Lakhani A.; Patil S.; Schwier E.F.; Matsumura T.; Shimada K.; Ghosh A.K.; Chatterjee S.
dc.date.accessioned2025-05-23T11:30:07Z
dc.description.abstractThe angle resolved photo-emission spectroscopy (ARPES) study and magneto-transport properties of Bi2CuxTe3-x have been investigated. ARPES study indicates the clear existence of surface states in the as-prepared samples. The estimated bandgap from ARPES is found to be ∼5 meV and 16 meV respectively for x = 0.03 and x = 0.15 samples. Presence of larger Cu concentration (x = 0.15) introduces magnetic ordering. Observed non-linearity in the Hall data is due to the existence of anomalous Hall effect which can be attributed to the 2D transport. The observed magneto-transport features might be related to the surface carriers which is confirmed by ARPES study. © 2020 IOP Publishing Ltd.
dc.identifier.doihttps://doi.org/10.1088/1361-648X/ab8521
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/11842
dc.relation.ispartofseriesJournal of Physics Condensed Matter
dc.titleAnomalous Hall effect in Cu doped Bi2Te3 topological insulator

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